型号: | MMBT3904/E9 |
厂商: | GENERAL SEMICONDUCTOR INC |
元件分类: | 小信号晶体管 |
英文描述: | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
封装: | SOT-23, 3 PIN |
文件页数: | 1/3页 |
文件大小: | 89K |
代理商: | MMBT3904/E9 |
相关PDF资料 |
PDF描述 |
---|---|
MMBT3904/E8 | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
MMBT3904 | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
MMBT3904FN3T/R7 | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
MMBT3904G-AE3-R | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
MMBT3904G-AL3-R | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
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MMBT3904FA-7B | 制造商:Diodes Incorporated 功能描述:GENERAL PURPOSE TRANSISTOR X2-DFN0806-3 T&R 10K - Tape and Reel 制造商:Diodes Incorporated 功能描述:TRANS NPN 40V 200MA X2-DFN0806-3 |
MMBT3904FN3 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:NPN GENERAL PURPOSE SWITCHING TRANSISTOR |
MMBT3904FW | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
MMBT3904G | 制造商:ZOWIE 制造商全称:Zowie Technology Corporation 功能描述:General Purpose Transistor |
MMBT3904-G | 功能描述:射频双极电源晶体管 VCEO=40V IC=200mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |