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参数资料
| 型号： | MMBT3904T |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 代理商： | MMBT3904T |
MMBT3904T
NPN General
Purpose Amplifier
Features
Collector Current: 0.2A
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0)
40
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10 Adc, IE=0)
60
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10 Adc, IC=0)
6.0
Vdc
ICBO
Collector Cut-off Current
(VCB=30Vdc, IE=0)
50
nAdc
IEBO
Emitter Cut-off Current
(VEB=5Vdc, IC=0)
50
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=0.1mAdc, VCE=1.0Vdc)
(IC=1.0mAdc, VCE=1.0Vdc)
(IC=10mAdc, VCE=1.0Vdc)
(IC=50mAdc, VCE=1.0Vdc)
(IC=100mAdc, VCE=1.0Vdc)
40
70
100
60
30
300
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
0.2
0.3
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
0.65
0.85
0.95
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz)
300
MHz
Cobo
Output Capacitance
(VCB=5.0Vdec, IE=0, f=1.0MHz)
4.0
pF
NF
Noise Figure
(IC=100 Adc, VCE=5.0Vdc, RS=1.0k
f=1MHz)
5.0
dB
SWITCHING CHARACTERISTICS
td
Delay Time
35
ns
tr
Rise Time
(VCC=3.0Vdc, VBE=0.5Vdc
IC=10mAdc, IB1=1.0mAdc)
35
ns
ts
Storage Time
200
ns
tf
Fall Time
(VCC=3.0Vdc, IC=10mAdc
IB1=IB2=1.0mAdc)
50
ns
omponents
20736 Marilla
Street Chatsworth
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MCC
SOT-523
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A.059
.067
1.50
1.70
B
.030
.033
0.75
0.85
C
.057
.069
1.45
1.75
D
.020 Nominal
0.50Nominal
E
.035
.043
0.90
1.10
G
.000
.004
.000
.100
H
.028
.031
.70
0.80
J
.004
.008
.100
.200
K
.010
.014
.25
.35
A
C
B
D
E
G
H
J
DIMENSIONS
K
Revision: 3
2006/05/13
TM
Micro Commercial Components
E
B
C
MMBT3904T
Operating and Storage Junction Temperatures: -55
to 150
150mW
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
Marking:1N
www.mccsemi.com
1 of 3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT3904-T | 功能描述:两极晶体管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT3904-T/R | 制造商:Micro Commercial Components (MCC) 功能描述:Trans GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R |
| MMBT3904T_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT3904T_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:150mW NPN General Purpose Amplifier |
| MMBT3904T_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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