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参数资料
| 型号： | MMBT3904W |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 118K |
| 代理商： | MMBT3904W |
PAGE . 2
May 10.2010-REV.00
MMBT3904W
Pa r a m e te r
S ym b o l
Te s t C o nd it io n
M IN.
TYP.
M AX.
Unit s
C o lle c t o r - E m i t t e r B r eak down Vo ltage
V (B R)C E O
IC = 1 . 0m A , IB = 0
40
-
V
C o lle c t o r - B a s e B r eak down Vo lt age
V (B R)CBO
IC = 1 0 uA , IE =0
6 0
-
V
E m i tt e r - B a se B r eak down Vo lt age
V (B R)EBO
IE = 1 0 uA, IC =0
6 .0
-
V
B a s e Cuto f f Cur r e nt
IBL
VC E= 3 0 V, VEB= 3 . 0 V
-
5 0
nA
Co lle c t o r Cut o ff C ur r e nt
ICE X
VC E= 3 0 V, VEB= 3 . 0 V
-
5 0
nA
D C C ur r ent G a i n ( Note 2)
h
FE
IC =0 .1 m A , V C E = 1 . 0 V
IC =1 .0 m A , V C E = 1 . 0 V
IC = 1 0 m A, VC E= 1 .0 V
IC = 5 0 m A, VC E= 1 .0 V
IC = 1 00m A , V C E = 1 . 0V
40
70
100
60
30
-
300
-
C o lle c t o r - E m i t t e r S a t ur a t i on Vo ltage ( Not e 2)
V CE (SAT)
IC =1 0 m A , IB =1 .0 m A
IC = 5 0 m A , IB = 5 .0 m A
--
0. 2
0. 3
V
B a se - E m i t te r S a t ur a t i on Vo lt age ( Note 2)
V BE(S AT)
IC =1 0 m A , IB =1 .0 m A
IC = 5 0 m A , IB = 5 .0 m A
0. 6 5
-
0. 8 5
0. 9 5
V
C o lle ct or - B a se C a p a c i t a nce
C CB O
V C B = 5 V, IE =0 , f=1 M Hz
-
4 .0
p F
E m i tt e r - B a se C apac i t anc e
C EBO
VEB= 0 . 5 V, IC = 0 , f= 1 M Hz
-
8 . 0
p F
De la y Ti m e
t d
V C C = 3V, V B E =- 0.5V,
IC = 1 0 m A ,IB = 1 . 0 m A
--
3 5
ns
Ri s e Ti m e
tr
V C C = 3V, V B E =- 0.5V,
IC = 1 0 m A ,IB = 1 . 0 m A
--
3 5
ns
S t or age Ti m e
t s
V C C = 3V, IC = 10m A
IB 1= IB 2 = 1. 0m A
-
200
ns
F a ll Ti m e
tf
V C C = 3V, IC = 10m A
IB 1= IB 2 = 1. 0m A
--
5 0
ns
ELECTRICAL CHARACTERISTICS
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
275
W
10K
W
0
-0 .5 V
300 ns
Duty Cycle ~ 2.0%
+10.9V
+3V
D elay and R ise Tim e Equivalent Test C ircuit
< 1ns
C *<4pF
S
Storage and Fall Tim e Equivalent Test Circuit
0
-9 .1V
10 to 500us
Duty Cycle ~ 2.0%
+10.9V
< 1ns
0
1N 916
+3V
275
W
10K
W
C *<4pF
S
SWITCHING TIME EQUIVALENT TEST CIRCUITS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT3904W_10 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:NPN GENERAL PURPOSE SWITCHING TRANSISTOR |
| MMBT3904WG | 制造商:ZOWIE 制造商全称:Zowie Technology Corporation 功能描述:General Purpose Transistor |
| MMBT3904WT1 | 功能描述:两极晶体管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT3904WT1_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistors |
| MMBT3904WT1G | 功能描述:两极晶体管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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