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参数资料
| 型号： | MMBT3906T |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 660K |
| 代理商： | MMBT3906T |
MMBT3906T
PNP General
Purpose Transistor
Features
Surface Mount SOT-523 Package
Epitaxial Planar Die Construction
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
-40
V
VCBO
Collector-Base Voltage
-40
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
-200
mA
RθJA
Typical Thermal Resistance Junction
to Ambient
833
℃
/W
PD
Power Dissipation
150
mW
TJ
Junction Temperature
-55 to +150
℃
TSTG
Storage Temperature
-55 to +150
℃
Electrical Characteristics @ 25
°C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0)
-40
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-10Adc, IE=0)
-40
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-10Adc, IC=0)
-5.0
Vdc
ICBO
Collector Cut-off Current
(VCB=-30Vdc, IE=0)
-50
nAdc
IEBO
Emitter Cut-off Current
(VEB=-5Vdc, IC=0)
-50
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=-0.1mAdc, VCE=-1.0Vdc)
(IC=-1.0mAdc, VCE=-1.0Vdc)
(IC=-10mAdc, VCE=-1.0Vdc)
(IC=-50mAdc, VCE=-1.0Vdc)
(IC=-100mAdc, VCE=-1.0Vdc)
60
80
100
60
30
300
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1.0mAdc)
(IC=-50mAdc, IB=-5.0mAdc)
-0.25
-0.4
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1.0mAdc)
(IC=-50mAdc, IB=-5.0mAdc)
-0.65
-0.85
-0.95
Vdc
SOT-523
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.059
.067
1.50
1.70
B
.030
.033
0.75
0.85
C
.057
.069
1.45
1.75
D
.020 Nominal
0.50Nominal
E
.035
.043
0.90
1.10
G
.000
.004
.000
.100
H
.028
.031
.70
0.80
J
.004
.008
.100
.200
K
.010
.014
.25
.35
A
C
B
D
E
G
H
J
DIMENSIONS
K
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision: 2
2006/05/13
TM
Micro Commercial Components
E
B
C
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Marking:3N
www.mccsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT3906-T | 功能描述:两极晶体管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT3906-T/R | 制造商:Micro Commercial Components (MCC) 功能描述:TRANSISTOR PNP SO |
| MMBT3906T_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT3906T_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP General Purpose Transistor |
| MMBT3906T_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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