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参数资料
| 型号： | MMBT404ALT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 1/22页 |
| 文件大小： | 294K |
| 代理商： | MMBT404ALT3 |
2–296
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Chopper Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–35
Vdc
Collector–Base Voltage
VCBO
–40
Vdc
Emitter–Base Voltage
VEBO
–25
Vdc
Collector Current — Continuous
IC
–150
mAdc
DEVICE MARKING
MMBT404ALT1 = 2N
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,*
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
R
θJA
556
°C/W
Total Device Dissipation
Alumina Substrate,** TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
* FR–5 = 1.0 x 0.75 x 0.062 in.
** Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–35
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = –10 Adc, IE = 0)
V(BR)CBO
–40
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
–25
—
Vdc
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
ICBO
—
–100
nAdc
Emitter Cutoff Current
(VEB = –10 Vdc, IC = 0)
IEBO
—
–100
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBT404ALT1
Motorola Preferred Device
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
COLLECTOR
3
1
BASE
2
EMITTER
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