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参数资料
| 型号： | MMBT4401 |
| 厂商： | RECTRON LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 351K |
| 代理商： | MMBT4401 |
FEATURES
*
Power dissipation
PCM:
0.3 W(Tamb=25
OC)
Collector current
ICM:
0.6 A
Collector-base voltage
V(BR)CBO: 60 V
Operating and storage junction temperature range
TJ,Tstg: -55OC to+150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
MMBT4401
2007-5
ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted)
MAXIMUM RATINGES ( @ TA = 25OC unless otherwise noted)
Notes :
CHARACTERISTICS
SYMBOL
UNITS
417
oC/W
Thermal Resistance Junction to Ambient
RATINGS
Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25
OC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
PD
TJ
TSTG
R qJA
VALUE
MAX.
-
TYP.
-
MIN.
UNITS
mW
300
1. Alumina=0.4*0.3*0.024in.99.5% alumina
2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)".
150
-55 to +150
oC
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
Dimensions in inches and (millimeters)
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
1
3
BASE
EMITTER
COLLECTOR
2
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.047(1.20)
0.055(1.40)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT4401_D87Z | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4401_Q | 功能描述:两极晶体管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4401-13 | 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 10K - Tape and Reel |
| MMBT4401-13-02-F | 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 3K - Tape and Reel |
| MMBT4401-13-03-F | 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 3K - Tape and Reel |
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