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参数资料
| 型号： | MMBT4401L99Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SO-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 27K |
| 代理商： | MMBT4401L99Z |
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 0.1 mA, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 0.1 mA, IC = 0
6.0
V
IBL
Base Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
A
ICEX
Collector Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
A
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 1.0 V
IC = 500 mA, VCE = 2.0 V
20
40
80
100
40
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.4
0.75
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.75
0.95
1.2
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 20 mA, VCE = 10 V,
f = 100 MHz
250
MHz
Ccb
Collector-Base Capacitance
VCB = 5.0 V, IE = 0,
f = 140 kHz
6.5
pF
Ceb
Emitter-Base Capacitance
VBE = 0.5 V, IC = 0,
f = 140 kHz
30
pF
hie
Input Impedance
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
1.0
15
k
hre
Voltage Feedback Ratio
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
0.1
8.0
x 10
-4
hfe
Small-Signal Current Gain
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
40
500
hoe
Output Admittance
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
1.0
30
mhos
SWITCHING CHARACTERISTICS
td
Delay Time
VCC = 30 V, VEB = 0.2 V,
15
ns
tr
Rise Time
IC = 150 mA, IB1 = 15 mA
20
ns
ts
Storage Time
VCC = 30 V, IC = 150 mA
225
ns
tf
Fall Time
IB1 = IB2 = 15 mA
30
ns
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
Symbol
Parameter
Test Conditions
Min
Max
Units
NPN General Purpose Amplifier
(continued)
2N4401
/
MMBT4401
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相关代理商/技术参数 |
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| MMBT4401LT | 制造商:Motorola 功能描述:4401 MOT N12J6G |
| MMBT4401LT1 | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4401LT1G | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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| MMBT4401LT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
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