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参数资料
| 型号： | MMBT4403 |
| 厂商： | DIOTEC SEMICONDUCTOR AG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 代理商： | MMBT4403 |
MMBT4403
MMBT4403
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflchenmontage
PNP
Version 2006-05-09
Dimensions - Mae [mm]
1 = B
2 = E
3 = C
Power dissipation – Verlustleistung
250 mW
Plastic case
Kunststoffgehuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MMBT4403
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
- VCEO
40 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
- VCBO
40 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEB0
5 V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
- IC
600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhltnis 2)
- IC = 0.1 mA, - VCE = 1 V
- IC = 1 mA,
- VCE = 1 V
- IC = 10 mA, - VCE = 1 V
- IC = 150 mA, - VCE = 2 V
- IC = 500 mA, - VCE = 2 V
hFE
30
60
100
20
–
300
–
h-Parameters at/bei - VCE = 10 V, - IC = 1 mA, f = 1 kHz
Small signal current gain – Kleinsignal-Stromverstrkung
hfe
60
–
500
Input impedance – Eingangs-Impedanz
hie
1.5 k
–
15 k
Output admittance – Ausgangs-Leitwert
hoe
1 S
–
30 S
Reverse voltage transfer ratio – Spannungsrückwirkung
hre
0.1*10-4
–
8*10-4
Collector-Emitter saturation voltage – Kollektor-Emitter-Sttigungsspg. 2)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
- VCEsat
–
0.40 V
0.75 V
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Ltpad) an jedem Anschluss
2
Tested with pulses tp = 300 s, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 s, Schaltverhltnis ≤ 2%
Diotec Semiconductor AG
http://www.diotec.com/
1
2.
5ma
x
1.
3
±0
.1
1.1
0.4
2.9 ±0.1
1
2
3
Type
Code
1.9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT4403 | 制造商:Fairchild Semiconductor Corporation 功能描述:RF Bipolar Transistor 制造商:Vishay Semiconductors 功能描述:Small Signal Bipolar Transistor Transist |
| MMBT4403_D87Z | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4403_Q | 功能描述:两极晶体管 - BJT SOT-23 PNP GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4403-13 | 制造商:Diodes Incorporated 功能描述:N-CH MOSFET,SOT23,T&R,3K,100V,0.17A,6.0O, SMT - Tape and Reel 制造商:Zetex / Diodes Inc 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin SOT-23 T/R |
| MMBT4403-13-F | 制造商:Zetex / Diodes Inc 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin SOT-23 T/R 制造商:Diodes Incorporated 功能描述:TRANS GP BJT PNP 40V 0.6A 3PIN SOT-23 - Tape and Reel |
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