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参数资料
| 型号： | MMBT4403 |
| 厂商： | DIOTEC SEMICONDUCTOR AG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 0K |
| 代理商： | MMBT4403 |
MMBT4403
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base-Emitter saturation voltage – Basis-Emitter-Sttigungsspannung 2)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
- VBEsat
0.75 V
–
0.95 V
1.3 V
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 35 V, - VEB = 0,4 V
- ICEX
–
100 nA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VCE = 35 V, - VEB = 0,4 V
- IEBV
–
–-
100 nA
Gain-Bandwidth Product – Transitfrequenz
- IC = 20 mA, - VCE = 10 V, f = 100 MHz
fT
200 MHz
–
Collector-Base Capacitance – Kollektor-Basis-Kapazitt
- VCB = 5 V, IE = ie = 0, f = 1 MHz
CCBO
–
8.5 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazitt
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEBO
–
30 pf
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
storage time
fall time
- ICon = 10 mA
- IBon = 1 mA
IBoff = 1 mA
td
–
15 ns
tr
–
20 ns
ts
–
225 ns
tf
–
30 ns
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht – umgebende Luft
RthA
< 420 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementre NPN-Transistoren
MMBT4401
Marking - Stempelung
MMBT4403 = 2T
2
Tested with pulses tp = 300 s, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 s, Schaltverhltnis ≤ 2%
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Ltpad) an jedem Anschluss
2
http://www.diotec.com/
Diotec Semiconductor AG
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT4403 | 制造商:Fairchild Semiconductor Corporation 功能描述:RF Bipolar Transistor 制造商:Vishay Semiconductors 功能描述:Small Signal Bipolar Transistor Transist |
| MMBT4403_D87Z | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4403_Q | 功能描述:两极晶体管 - BJT SOT-23 PNP GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4403-13 | 制造商:Diodes Incorporated 功能描述:N-CH MOSFET,SOT23,T&R,3K,100V,0.17A,6.0O, SMT - Tape and Reel 制造商:Zetex / Diodes Inc 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin SOT-23 T/R |
| MMBT4403-13-F | 制造商:Zetex / Diodes Inc 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin SOT-23 T/R 制造商:Diodes Incorporated 功能描述:TRANS GP BJT PNP 40V 0.6A 3PIN SOT-23 - Tape and Reel |
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