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参数资料
| 型号： | MMBT5086S62Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 60K |
| 代理商： | MMBT5086S62Z |
2N5086
/
MMBT5086
/
2N5087
/
MMBT5087
2N5086
2N5087
MMBT5086
MMBT5087
PNP General Purpose Amplifier
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
This device is designed for low level, high gain, low noise general
purpose amplifier applications at collector currents to 50 mA.
Sourced from Process 62.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
50
V
VCBO
Collector-Base Voltage
50
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
100
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
TA= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5086
*MMBT5086
*MMBT5087
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW /
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: 2P / 2Q
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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| MMBT5087LT1 | 功能描述:两极晶体管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT5087LT1G | 功能描述:两极晶体管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT5087LT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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