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参数资料
| 型号： | MMBT5179S62Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/4页 |
| 文件大小： | 41K |
| 代理商： | MMBT5179S62Z |
MPS5179
/
MMBT5179
/
PN5179
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
VCEO(sus)
Collector-Emitter Sustaining Voltage*
IC = 3.0 mA, IB = 0
12
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 1.0
A, I
E = 0
20
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
2.5
V
ICBO
Collector Cutoff Current
VCB = 15 V, IE = 0
VCB = 15 V, TA = 150
°C
0.02
1.0
A
hFE
DC Current Gain
IC = 3.0 mA, VCE = 1.0 V
25
250
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
0.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
1.0
V
fT
Current Gain - Bandwidth Product
IC = 5.0 mA, VCE = 6.0 V,
f = 100 MHz
900
2000
MHz
Ccb
Collector-Base Capacitance
VCB = 10 V, IE = 0,
f = 0.1 to 1.0 MHz
1.0
pF
hfe
Small-Signal Current Gain
IC = 2.0 mA, VCE = 6.0 V,
f = 1.0 kHz
25
300
rb’Cc
Collector Base Time Constant
IC = 2.0 mA, VCB = 6.0 V,
f = 31.9 MHz
3.0
14
ps
NF
Noise Figure
IC = 1.5 mA, VCE = 6.0 V,
RS = 50
, f = 200 MHz
5.0
dB
FUNCTIONAL TEST
Gpe
Amplifier Power Gain
VCE = 6.0 V, IC = 5.0 mA,
f = 200 MHz
15
dB
PO
Power Output
VCB = 10 V, IE = 12 mA,
f
≥ 500 MHz
20
mW
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 Ise=69.28E-18 Ikf=22.03m Xtb=1.5 Br=1.176
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588n
Tf=135.6p Itf=.27 Vtf=10 Xtf=30 Rb=10)
NPN RF Transistor
(continued)
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| MMBT5210 | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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