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参数资料
| 型号： | MMBT5551-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 72K |
| 代理商： | MMBT5551-13 |
DS30061 Rev. 8 - 2
2 of 3
MMBT5551
www.diodes.com
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Date Code Key
K4N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K4N
YM
Marking Information
Device
Packaging
Shipping
MMBT5551-7
SOT-23
3000/Tape & Reel
Ordering Information (Note 4)
Notes:
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT5551-7-F
.
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
180
V
IC = 100
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
160
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICBO
50
nA
mA
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100
°C
Emitter Cutoff Current
IEBO
50
nA
VEB = 4.0V, IC = 0
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
80
30
250
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.15
0.20
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
1.0
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
6.0
pF
VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
50
250
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = 10V, IC = 10mA,
f = 100MHz
Noise Figure
nF
8.0
dB
VCE = 5.0V, IC = 200
mA,
RS = 1.0k
W, f = 1.0kHz
Electrical Characteristics @ TA = 25°C unless otherwise specified
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT5551-7 | 功能描述:两极晶体管 - BJT SS NPN 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT5551-7-F | 功能描述:两极晶体管 - BJT SS NPN 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT5551-G | 功能描述:射频双极电源晶体管 VCEO=160V IC=600mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| MMBT5551LT1 | 功能描述:两极晶体管 - BJT 600mA 160V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT5551LT1G | 功能描述:两极晶体管 - BJT 600mA 160V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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