- 您现在的位置：买卖IC网 > PDF目录182952 > MMBTA06/E8 (GENERAL SEMICONDUCTOR INC) 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PDF资料下载
参数资料
| 型号： | MMBTA06/E8 |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 代理商： | MMBTA06/E8 |
MMBTA06
Vishay Semiconductors
formerly General Semiconductor
Document Number 88228
www.vishay.com
20-Feb-02
1
Small Signal Transistors (NPN)
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
4.0
V
Collector Current
IC
500
mA
Power Dissipation at TA = 25°C
Ptot
277(1)
mW
300(2)
Thermal Resistance Junction to Ambiant Air
R
θJA
450(1)
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
Notes: (1) Device on fiberglass substrate, see layout on third page.
(2) Device on alumina substrate.
Features
NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the PNP tranistor MMBTA56 is
recommended.
This transistor is also available in the TO-92 case with the
type designation MPSA06.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 1GM
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
相关PDF资料 |
PDF描述 |
|---|---|
| MMBTA06/E9 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTA06G-AE3-R | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBTA06 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBTA13LT1 | |
| MMBTA13 | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBTA06-GS08 | 功能描述:两极晶体管 - BJT NPN Switching/Amp RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA06LT1 | 功能描述:两极晶体管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA06LT1G | 功能描述:两极晶体管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA06LT1HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 80V 0.5A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANS NPN 80V 500MA SOT23 制造商:Infineon Technologies AG 功能描述:TRANSISTOR AF NPN SOT-23 |
| MMBTA06LT3 | 功能描述:两极晶体管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。