参数资料
型号: MMBTA06
厂商: DIOTEC SEMICONDUCTOR AG
元件分类: 小信号晶体管
英文描述: 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 1/2页
文件大小: 105K
代理商: MMBTA06
MMBTA05 / MMBTA06
MMBTA05 / MMBTA06
NPN
Surface mount general purpose Si-epitaxial planar transistors
Vielzweck Si-Epitaxial Planar-Transistoren für die Oberflchenmontage
NPN
Version 2007-06-25
Dimensions / Mae [mm]
1 = B
2 = E
3 = C
Power dissipation
Verlustleistung
250 mW
Plastic case
Kunststoffgehuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MMBTA05
MMBTA06
Collector-Emitter-volt. - Kollektor-Emitter-Spannung
B open
VCEO
60 V
80 V
Collector-Base-voltage - Kollektor-Basis-Spannung
E open
VCBO
60 V
80 V
Emitter-Base-voltage - Emitter-Basis-Spannung
C open
VEBO
4 V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
IC
500 mA
Base current – Basisstrom
I
B
100 mA
Peak Base current – Basis-Spitzenstrom
IBM
200 mA
Junction temperature – Sperrschichttemperatur
Tj
-55...+150°C
Storage temperature – Lagerungstemperatur
TS
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 60 V
IE = 0, VCB = 80 V
MMBTA05
MMBTA06
ICB0
100 nA
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 4 V
IEB0
100 nA
Collector saturation voltage – Kollektor-Sttigungsspannung 2)
IC = 100 mA, IB = 10 mA
VCEsat
250 mV
Base saturation voltage – Basis-Sttigungsspannung 2)
IC = 100 mA, IB = 10 mA
VBEsat
1.2 V
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Ltpad) an jedem Anschluss
2
Tested with pulses tp = 300 s, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 s, Schaltverhltnis ≤ 2%
Diotec Semiconductor AG
http://www.diotec.com/
1
2.
5
m
ax
1.
3
±
0.
1
1.1
2.9 ±0.1
0.4
1
2
3
Type
Code
1.9
相关PDF资料
PDF描述
MMBTA05 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
MMBTA06 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBTA06 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTA06/E8 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTA06 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
相关代理商/技术参数
参数描述
MMBTA06_D87Z 功能描述:两极晶体管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMBTA06_L98Z 功能描述:两极晶体管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMBTA06_Q 功能描述:两极晶体管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMBTA06-7 功能描述:两极晶体管 - BJT 80V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMBTA06-7-01-F 制造商:DIODES 功能描述:TRANSISTOR NPN 80V / SOT-23 (LEAD FREE)