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参数资料
| 型号： | MMBTA64 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SOT-23, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 21K |
| 代理商： | MMBTA64 |
DS30055 Rev. A-2
1 of 1
MMBTA63 / MMBTA64
MMBTA63 / MMBTA64
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
Epitaxial Planar Die Construction
Complementary NPN Types Available
(MMBTA13 / MMBTA14)
Ideal for Medium Power Amplification and
Switching
High Current Gain
Characteristic
Symbol
MMBTA63
MMBTA64
Unit
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-10
V
Collector Current - Continuous (Note 1)
IC
-500
mA
Power Dissipation (Note 1)
Pd
350
mW
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
357
K/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
MMBTA63 Marking: K2E
MMBTA64 Marking: K3E
Weight: 0.008 grams (approx.)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
≤ 300s, duty cycle ≤ 2%.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
V(BR)CEO
-30
V
IC = -100
AVBE = 0V
Collector Cutoff Current
ICBO
-100
nA
VCB = -30V, IE = 0
Emitter Cutoff Current
IEBO
-100
nA
VEB = -10V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
MMBTA63
MMBTA64
MMBTA63
MMBTA64
hFE
5,000
10,000
20,000
IC = -10mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
-1.5
V
IC = -100mA, IB = -100
A
Base- Emitter Saturation Voltage
VBE(SAT)
-2.0
V
IC = -100mA, VCE = -5.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
125
MHz
VCE = -5.0V, IC = -10mA,
f = 100MHz
POWER SEMICONDUCTOR
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBTA64_Q | 功能描述:达林顿晶体管 PNP Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMBTA64-7 | 功能描述:达林顿晶体管 -30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMBTA64-7-F | 功能描述:达林顿晶体管 -30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMBTA64LT1 | 功能描述:达林顿晶体管 500mA 30V PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMBTA64LT1G | 功能描述:达林顿晶体管 500mA 30V PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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