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参数资料
| 型号： | MMBTA92 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 代理商： | MMBTA92 |
MMBTA92
PNP Silicon High
Voltage Transistor
SOT-23
Suggested Solder
Pad Layout
Features
Surface Mount SOT-23 Package
Capable of 300mWatts of Power Dissipation
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=-1.0mAdc, IB=0)
300
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-100
Adc, IE=0)
300
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-10
Adc, IC=0)
5Vdc
IC
Collector Current-Continuous
300
mAdc
ICBO
Collector Cutoff Current
(VCB=-200Vdc, IE=0)
250
nAdc
IEBO
Emitter Cutoff Current
(VEB=-3Vdc, IC=0)
250
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=-1.0mAdc, VCE=-10Vdc)
(IC=-10mAdc, VCE=-10Vdc)
(IC=-50mAdc, VCE=-10Vdc)
25
100
25
200
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-20mAdc, IB=-2.0mAdc)
0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-20mAdc,IB=-2.0Vdc)
0.9
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=-10mAdc, VCE=-5.0Vdc, f=30MHz)
50
MHz
Ccb
Collector-Base Capacitance
(VCB=-20Vdc, IE=0, f=1.0MHz)
6.0
pF
THERMAL CHARACTERISTICS
K
A
B
C
D
E
F
G
H
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
–55 to +150
°C
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
Revision: 3
2006/05/13
omponents
20736 Marilla Street Chatsworth
!"#
$% !"#
MCC
TM
Micro Commercial Components
E
B
C
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
Marking:2D
www.mccsemi.com
1 of 3
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相关代理商/技术参数 |
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|---|---|
| MMBTA92 T/R | 功能描述:开关晶体管 - 偏压电阻器 TRANS SW TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MMBTA92,215 | 功能描述:两极晶体管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA92 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP SOT-23 |
| MMBTA92 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORS RF BIPOLAR TRANSISTOR TYPE: |
| MMBTA92_D87Z | 功能描述:两极晶体管 - BJT PNP Transistor High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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