参数资料
型号: MMBTA92D87Z
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件页数: 1/14页
文件大小: 881K
代理商: MMBTA92D87Z
PNP High Voltage Amplifier
This device is designed for high voltage driver applications.
Sourced from Process 76.
MMBTA92
MPSA92
PZTA92
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
300
V
VCBO
Collector-Base Voltage
300
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
500
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSA92
*MMBTA92
**PZTA92
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: 2D
B
C
SOT-223
E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
MPSA92
/
MMBT
A92
/
PZT
A92
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
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