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参数资料
| 型号： | MMBTA92D87Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 7/14页 |
| 文件大小： | 881K |
| 代理商： | MMBTA92D87Z |
3
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
300
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
300
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100
A, I
C = 0
5.0
V
ICBO
Collector-Cutoff Current
VCB = 200 V, IE = 0
0.25
A
IEBO
Emitter-Cutoff Current
VEB = 3.0 V, IC = 0
0.1
A
SMALL SIGNAL CHARACTERISTICS
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
25
40
25
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 20 mA, IB = 2.0 mA
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 20 mA, IB = 2.0 mA
0.9
V
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
50
MHz
Ccb
Collector-Base Capacitance
VCB = 20 V, IE = 0, f = 1.0 MHz
6.0
pF
Spice Model
PNP (Is=218.9f Xti=3 Eg=1.11 Vaf=100 Bf=99 Ne=1.307 Ise=218.9f Ikf=.2016 Xtb=1.5 Br=24.67 Nc=2 Isc=0
Ikr=0 Rc=7 Cjc=19.88p Mjc=.4876 Vjc=.75 Fc=.5 Cje=81.49p Mje=.3493 Vje=.75 Tr=516.9p Tf=1.395n Itf=1.5
Vtf=22 Xtf=270 Rb=10)
Typical Characteristics
PNP High Voltage Amplifier
(continued)
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
DC Current Gain
vs Collector Current
0.1
1
10
100
0
20
40
60
80
100
120
140
I
- COLLECTOR CURRENT (mA)
h
-
DC
CU
R
E
N
T
G
A
IN
FE
C
V
= 5V
CE
125 °C
- 40 °C
25 °C
Collector-Emitter Saturation
Voltage vs Collect or Current
0.1
1
10
100
0.2
0.4
0.6
I
- COLLECTOR CURRENT (mA)
V
-
C
O
LL
E
C
TO
R
-E
M
IT
TE
R
V
O
LT
A
G
E
(
V
)
C
ESA
T
C
β = 10
125 °C
- 40 °C
25 °C
MPSA92
/
MMBT
A92
/
PZT
A92
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBTA92LT1 | 功能描述:两极晶体管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA92LT1G | 功能描述:两极晶体管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA92LT1HTSA1 | 制造商:Infineon Technologies AG 功能描述:TRANSISTOR HI-VOLT PNP SOT-23 |
| MMBTA92LT1XT | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 300V 0.5A 3-Pin SOT-23 T/R |
| MMBTA92LT1XT/DSC | 制造商:Infineon Technologies AG 功能描述:TRANS GP BJT PNP 300V 0.5A 3PIN SOT-23 - Tape and Reel |
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