- 您现在的位置：买卖IC网 > PDF目录98025 > MMBTH81LT3 (ON SEMICONDUCTOR) UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB PDF资料下载
参数资料
| 型号： | MMBTH81LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 1/21页 |
| 文件大小： | 286K |
| 代理商： | MMBTH81LT3 |
2–427
Motorola Small–Signal Transistors, FETs and Diodes Device Data
UHF/VHF Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–20
Vdc
Collector–Base Voltage
VCBO
–20
Vdc
Emitter–Base Voltage
VEBO
–3.0
Vdc
DEVICE MARKING
MMBTH81LT1 = 3D
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
R
θJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–20
—
Vdc
Collector–Base Breakdown Voltage (IC = –10 Adc, IE = 0)
V(BR)CBO
–20
—
Vdc
Emitter–Base Breakdown Voltage (IE = –10 Adc, IC = 0)
V(BR)EBO
–3.0
—
Vdc
Collector Cutoff Current (VCB = –10 Vdc, IE = 0)
ICBO
—
–100
nAdc
Emitter Cutoff Current (VEB = –2.0 Vdc, IC = 0)
IEBO
—
–100
nAdc
ON CHARACTERISTICS
DC Current Gain (IC = –5.0 mAdc, VCE = –10 Vdc)
hFE
60
—
Collector–Emitter Saturation Voltage (IC = –5.0 mAdc, IB = –0.5 mAdc)
VCE(sat)
—
–0.5
Vdc
Base–Emitter On Voltage (IC = –5.0 mAdc, VCE = –10 Vdc)
VBE(on)
—
–0.9
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT
600
—
MHz
Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
0.85
pF
Collector–Emitter Capacitance (IB = 0, VCB = –10 Vdc, f = 1.0 MHz)
Cce
—
0.65
pF
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBTH81LT1
Motorola Preferred Device
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
COLLECTOR
3
1
BASE
2
EMITTER
相关PDF资料 |
PDF描述 |
|---|---|
| MMC2112CCPV33 | 32-BIT, FLASH, 33 MHz, RISC MICROCONTROLLER, PQFP144 |
| MMDF2C01HDR2 | 5.2 A, 20 V, 0.055 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| MMDF2C01HDR2 | 5.2 A, 20 V, 0.045 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| MMDF2C02HDR2 | 3.8 A, 20 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| MMDF2C03HDR2 | 2 A, 30 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBTRA101 RF | 功能描述:两极晶体管 - BJT PNP digital trans 4.7/4.7kohm RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTRA102 RF | 功能描述:两极晶体管 - BJT PNP digital trans 10/10kohm RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTRA103 RF | 功能描述:两极晶体管 - BJT PNP digital trans 22/22kohm RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTRA104 RF | 功能描述:两极晶体管 - BJT PNP digital trans 47/47kohm RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTRA105 RF | 功能描述:两极晶体管 - BJT PNP digital trans 2.2/47kohm RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。