参数资料
| 型号： | MMBZ15VDLT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | DIODE ZENER DUAL 40W 15V SOT-23 |
| 产品变化通告： | Wire Change 08/Jun/2009 |
| 标准包装： | 10,000 |
| 电压 - 反向隔离（标准值）： | 12.8V |
| 电压 - 击穿： | 14.3V |
| 功率（瓦特）： | 40W |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 1.0 ms (Note 1) @ T L ≤ 25 ° C
Total Power Dissipation on FR ? 5 Board (Note 2)
@ T A = 25 ° C
Derate above 25 ° C
Thermal Resistance Junction ? to ? Ambient
Total Power Dissipation on Alumina Substrate (Note 3)
@ T A = 25 ° C
Derate above 25 ° C
Thermal Resistance Junction ? to ? Ambient
Junction and Storage Temperature Range
Lead Solder Temperature ? Maximum (10 Second Duration)
Symbol
P pk
° P D °
R q JA
° P D °
R q JA
T J , T stg
T L
Value
40
225
1.8
556
300
2.4
417
? 55 to +150
260
Unit
Watts
mW
mW/ ° C
° C/W
°
mW
mW/ ° C
° C/W
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 5 and derate above T A = 25 ° C per Figure 6.
2. FR ? 5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
V BR
I F
V F
Maximum Temperature Coefficient of V BR
Forward Current
Forward Voltage @ I F
I PP
Uni ? Directional TVS
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V F = 0.9 V Max @ I F = 10 mA)
Breakdown Voltage
V C @ I PP (Note 5)
Device*
Device
Marking
V RWM
Volts
I R @ V RWM
nA
V BR (Note 4) (V)
Min Nom Max
@ I T
mA
V C
V
I PP
A
V BR
mV/ 5 C
MMBZ15VDLT1G/T3G
15D
12.8
100
14.3
15
15.8
1.0
21.2
1.9
12
(V F = 1.1 V Max @ I F = 20 0 mA)
Breakdown Voltage
V C @ I PP (Note 5)
Device*
Device
Marking
V RWM
Volts
I R @ V RWM
nA
V BR (Note 4) (V)
Min Nom Max
@ I T
mA
V C
V
I PP
A
V BR
mV/ 5 C
MMBZ27VCLT1G/T3G
27C
22
50
25.65
27
28.35
1.0
38
1.0
26
4. V BR measured at pulse test current I T at an ambient temperature of 25 ° C.
5. Surge current waveform per Figure 5 and derate per Figure 6
*Include SZ-prefix devices where applicable.
http://onsemi.com
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