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参数资料
| 型号： | MMBZ20VALT3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 文件页数： | 1/6页 |
| 文件大小： | 129K |
| 代理商： | MMBZ20VALT3 |
1
MOTOROLA
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
5.6, 6.2 15 & 20 Volt SOT-23
Dual Monolithic Common
Anode Zeners
Transient Voltage Suppressors
for ESD Protection
These dual monolithic silicon zener diodes are designed for applications
requiring transient overvoltage protection capability. They are intended for use
in voltage and ESD sensitive equipment such as computers, printers, business
machines, communication systems, medical equipment and other applications.
Their dual junction common anode design protects two separate lines using
only one package. These devices are ideal for situations where board space is
at a premium.
Specification Features:
SOT–23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Peak Power — 24 or 40 Watts @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 A
ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
Mechanical Characteristics:
Void Free, Transfer–Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel. Replace
the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel.
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (1)
MMBZ5V6ALT1, MMBZ6V2ALT1
@ TA ≤ 25°C
MMBZ15VALT1, MMBZ20VALT1
Ppk
24
40
Watts
Total Power Dissipation on FR–5 Board (2) @ TA = 25°C
Derate above 25
°C
°PD°
225
1.8
°mW°
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
556
°C/W
Total Power Dissipation on Alumina Substrate (3) @ TA = 25°C
Derate above 25
°C
°PD°
300
2.4
°mW
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature Range
TJ
Tstg
– 55 to +150
°C
Lead Solder Temperature — Maximum (10 Second Duration)
TL
260
°C
(1) Non–repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
(2) FR–5 = 1.0 x 0.75 x 0.62 in.
(3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
*Other voltages may be available upon request
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBZ5V6ALT1/D
Motorola, Inc. 1996
Rev 1
MMBZ5V6ALT1
MMBZ6V2ALT1
MMBZ15VALT1
MMBZ20VALT1
SOT–23 COMMON ANODE DUAL
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
24 & 40 WATTS
PEAK POWER
CASE 318–08
STYLE 12
LOW PROFILE SOT–23
PLASTIC
PIN 1. CATHODE
2. CATHODE
3. ANODE
1
3
2
Motorola Preferred Devices
*
1
2
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ20VALT3G | 功能描述:TVS二极管阵列 20V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ20VCL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 17V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 17V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 17V, SOT23; Reverse Stand-Off Voltage Vrwm:17V; Breakdown Voltage Min:19V; Breakdown Voltage Max:21V; Clamping Voltage Vc Max:28V; Peak Pulse Current Ippm:1.4A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes |
| MMBZ20VCL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 17V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| MMBZ20VCL/DG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ20VCL215 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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