参数资料
型号: MMBZ20VALT3
厂商: MOTOROLA INC
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
文件页数: 3/6页
文件大小: 129K
代理商: MMBZ20VALT3
3
MOTOROLA
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
P
D
,POWER
DISSIP
A
TION
(mW)
TEMPERATURE (
°C)
FR–5 BOARD
ALUMINA SUBSTRATE
0
1
2
3
320
280
240
160
120
40
0
Figure 4. Steady State Power Derating Curve
C,
CAP
ACIT
ANCE
(pF)
BIAS (V)
200
80
15 V
V
ALUE
(%)
100
50
0
1
2
3
4
t, TIME (ms)
Figure 5. Pulse Waveform
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IRSM.
tr ≤ 10 s
HALF VALUE —
IRSM
2
tP
tr
PEAK VALUE — IRSM
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
200
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Pulse Derating Curve
PEAK
PULSE
DERA
TING
IN
%
OF
PEAK
POWER
OR
CURRENT
@
T
A
=
25
Figure 7. Maximum Non–repetitive Surge
Power, Ppk versus PW
P
0.1
1
10
100
1000
1
10
100
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
Figure 8. Maximum Non–repetitive Surge
Power, Ppk(NOM) versus PW
0.1
1
10
100
1000
1
10
100
PW, PULSE WIDTH (ms)
pk
PEAK
SURGE
POWER
(W)
P pk
PEAK
SURGE
POWER
(W)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
MMBZ5V6ALT1
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal zener voltage measured at
the low test current used for voltage classification.
UNIDIRECTIONAL
5.6 V
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