- 您现在的位置：买卖IC网 > PDF目录133463 > MMBZ33VCL/DG (NXP SEMICONDUCTORS) TVS DIODE, TO-236AB PDF资料下载
参数资料
| 型号： | MMBZ33VCL/DG |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | TVS DIODE, TO-236AB |
| 封装： | HALOGEN FREE, PLASTIC, SMD, 3 PIN |
| 文件页数： | 14/15页 |
| 文件大小： | 79K |
| 代理商： | MMBZ33VCL/DG |
MMBZXVCL_MMBZXVDL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 September 2008
8 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
[1]
In accordance with IEC 61643-321 (10/1000
s current waveform).
[2]
Measured from pin 1 or 2 to pin 3.
SZ
temperature coefcient
IZ =1mA
MMBZ12VDL
MMBZ12VDL/DG
-
8.1
-
mV/K
MMBZ15VDL
MMBZ15VDL/DG
-
11
-
mV/K
MMBZ18VCL
MMBZ18VCL/DG
-
14
-
mV/K
MMBZ20VCL
MMBZ20VCL/DG
-
15.8
-
mV/K
MMBZ27VCL
MMBZ27VCL/DG
-
23
-
mV/K
MMBZ33VCL
MMBZ33VCL/DG
-
29.4
-
mV/K
Table 10.
Characteristics …continued
Tamb =25 °C unless otherwise specied.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
MMBZ27VCL: unidirectional and bidirectional
Tamb =25 °C
Fig 3.
Rated peak pulse power as a function of
exponential pulse duration (rectangular
waveform); typical values
Fig 4.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
006aab327
102
10
103
PPPM
(W)
1
tp (ms)
102
103
102
101
10
1
Tj (°C)
0
200
150
50
100
006aab321
0.4
0.8
1.2
PPPM
0
PPPM(25°C)
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB10100-E3/4W | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MART65KP75AE3 | 65000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MSPRT65KP75AE3 | 65000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MVRT65KP48AE3 | 65000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MXRT65KP54CA | 65000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ33VDG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ4617 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:ZENER DIODES |
| MMBZ4617-E3-08 | 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Intertechnologies 功能描述:ZENER DIODE SOT23 制造商:Vishay Semiconductors 功能描述:DIODE, ZENER, 2.4V, 350MW, SOT-23-3, Zener Voltage Vz Typ:2.4V, Power Dissipation Pd:350mW, Operating Temperature Min:-55C, Operating Temperature Max:150C, Diode Case Style:SOT-23, No. of Pins:3 , RoHS Compliant: Yes 制造商:Vishay Semiconductors 功能描述:DIODE, ZENER, 2.4V, 0.35W, SOT-23-3, Zener Voltage Vz Typ:2.4V, Power Dissipation Pd:350mW, Operating Temperature Min:-55C, Operating Temperature Max:150C, Diode Case Style:SOT-23, No. of Pins:3 , RoHS Compliant: Yes |
| MMBZ4617-E3-18 | 制造商:Vishay Intertechnologies 功能描述:ZENER DIODE SOT23 |
| MMBZ4617-G3-08 | 制造商:Vishay Intertechnologies 功能描述:ZENER DIODE SOT23 |
发布紧急采购，3分钟左右您将得到回复。