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参数资料
| 型号： | MMBZ33VCL/DG |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | TVS DIODE, TO-236AB |
| 封装： | HALOGEN FREE, PLASTIC, SMD, 3 PIN |
| 文件页数： | 2/15页 |
| 文件大小： | 79K |
| 代理商： | MMBZ33VCL/DG |
MMBZXVCL_MMBZXVDL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 September 2008
10 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
8.
Application information
The MMBZxVCL series and the MMBZxVDL series are designed for the protection of up
to two unidirectional data or signal lines from the damage caused by ESD and surge
pulses. The devices may be used on lines where the signal polarities are either positive or
negative with respect to ground. The devices provide a surge capability of 40 W per line
for a 10/1000
s waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the devices as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
9.
Test information
9.1 Quality information
This product has been qualied in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualication for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 9.
Typical application: ESD and transient voltage protection of data lines
006aab330
MMBZxVCL/VDL
line 1 to be protected
unidirectional protection
of two lines
bidirectional protection
of one line
line 2 to be protected
GND
MMBZxVCL/VDL
line 1 to be protected
GND
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ33VDG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ4617 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:ZENER DIODES |
| MMBZ4617-E3-08 | 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Intertechnologies 功能描述:ZENER DIODE SOT23 制造商:Vishay Semiconductors 功能描述:DIODE, ZENER, 2.4V, 350MW, SOT-23-3, Zener Voltage Vz Typ:2.4V, Power Dissipation Pd:350mW, Operating Temperature Min:-55C, Operating Temperature Max:150C, Diode Case Style:SOT-23, No. of Pins:3 , RoHS Compliant: Yes 制造商:Vishay Semiconductors 功能描述:DIODE, ZENER, 2.4V, 0.35W, SOT-23-3, Zener Voltage Vz Typ:2.4V, Power Dissipation Pd:350mW, Operating Temperature Min:-55C, Operating Temperature Max:150C, Diode Case Style:SOT-23, No. of Pins:3 , RoHS Compliant: Yes |
| MMBZ4617-E3-18 | 制造商:Vishay Intertechnologies 功能描述:ZENER DIODE SOT23 |
| MMBZ4617-G3-08 | 制造商:Vishay Intertechnologies 功能描述:ZENER DIODE SOT23 |
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