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参数资料
| 型号： | MMBZ5236ELT3G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 7.5 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
| 封装： | LEAD FREE, PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 73K |
| 代理商： | MMBZ5236ELT3G |
MMBZ5221ELT1 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZ
VF
ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.)
Device
Marking
Zener Voltage (Note 4)
Zener Impedance
Leakage Current
VZ (V)
@ IZT
ZZT @ IZT
ZZK @ IZK
IR @ VR
Min
Nom
Max
mA
W
mA
V
MMBZ5221ELT1/T3, G
BE2
2.28
2.4
2.52
20
30
1200
0.25
100
1
MMBZ5226ELT1/T3, G
BE7
3.13
3.3
3.47
20
28
1600
0.25
25
1
MMBZ5228ELT1/T3, G
BE9
3.70
3.9
4.10
20
23
1900
0.25
10
1
MMBZ5229ELT1/T3, G
BF1
4.08
4.3
4.52
20
22
2000
0.25
5
1
MMBZ5230ELT1/T3, G
BF2
4.46
4.7
4.94
20
19
1900
0.25
5
2
MMBZ5231ELT1/T3,G
BF3
4.84
5.1
5.36
20
17
1600
0.25
5
2
MMBZ5232ELT1/T3,G
BF4
5.32
5.6
5.88
20
11
1600
0.25
5
3
MMBZ5234ELT1/T3,G
BF6
5.89
6.2
6.51
20
7
1000
0.25
5
4
MMBZ5235ELT1/T3,G
BF7
6.46
6.8
7.14
20
5
750
0.25
3
5
MMBZ5236ELT1/T3, G
BF8
7.12
7.5
7.88
20
6
500
0.25
3
6
MMBZ5237ELT1/T3, G
BF9
7.79
8.2
8.61
20
8
500
0.25
3
6.5
MMBZ5239ELT1/T3, G
BG2
8.65
9.1
9.55
20
10
600
0.25
3
7
MMBZ5240ELT1/T3,G
BG3
9.50
10
10.50
20
17
600
0.25
3
8
MMBZ5242ELT1/T3,G
BG5
11.40
12
12.60
20
30
600
0.25
1
9.1
MMBZ5243ELT1/T3, G
BG6
12.35
13
13.65
9.5
13
600
0.25
0.5
9.9
MMBZ5244ELT1/T3, G
BG7
13.30
14
14.70
9
15
600
0.25
0.1
10
MMBZ5245ELT1/T3,G
BG8
14.25
15
15.75
8.5
16
600
0.25
0.1
11
MMBZ5246ELT1, G
BG9
15.20
16
16.80
7.8
17
600
0.25
0.1
12
MMBZ5248ELT1/T3,G
BH2
17.10
18
18.90
7
21
600
0.25
0.1
14
MMBZ5250ELT1/T3,G
BH4
19.00
20
21.00
6.2
25
600
0.25
0.1
15
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
*The “G’’ suffix indicates PbFree package available.
MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ5236-V | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Zener Diodes |
| MMBZ5236-V-G | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Zener Diodes |
| MMBZ5237 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:ZENER DIODES |
| MMBZ5237A | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
| MMBZ5237AW | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
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