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参数资料
| 型号： | MMBZ5236ELT3G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 7.5 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
| 封装： | LEAD FREE, PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 73K |
| 代理商： | MMBZ5236ELT3G |
MMBZ5221ELT1 Series
http://onsemi.com
5
TYPICAL CHARACTERISTICS
C,
CAP
ACIT
ANCE
(pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
1000
100
10
1
10
1
BIAS AT
50% OF VZ NOM
TA = 25°C
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01
10
8
6
4
2
0
TA = 25°C
I Z
,ZENER
CURRENT
(mA)
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01
10
30
50
70
90
TA = 25°C
I R
,LEAKAGE
CURRENT
(
A)m
90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.00
1
0.0001
0.00001
80
70
60
50
40
30
20
10
0
+150°C
+25 °C
55 °C
I Z
,ZENER
CURRENT
(mA)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
100
Figure 9. 8
× 20 ms Pulse Waveform
90
80
70
60
50
40
30
20
10
0
020
4060
80
t, TIME (
ms)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE IRSM/2 @ 20 ms
%
OF
PEAK
PULSE
CURRENT
PEAK VALUE IRSM @ 8 ms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ5236-V | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Zener Diodes |
| MMBZ5236-V-G | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Zener Diodes |
| MMBZ5237 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:ZENER DIODES |
| MMBZ5237A | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
| MMBZ5237AW | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
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