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参数资料
| 型号： | MMBZ5247/E9 |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 17 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
| 文件页数： | 1/3页 |
| 文件大小： | 125K |
| 代理商： | MMBZ5247/E9 |
Dimensions in inches and (millimeters)
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Zener Current (see Table “Characteristics”)
Power Dissipation at TA = 25°C
Ptot
225(1)
mW
300(2)
Thermal Resistance Junction to Ambient Air
R
θJA
556(1)
°C/W
Maximum Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +175
°C
Notes:
(1) On FR-5 board using recommended solder pad layout
(2) On alumina substrate
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
MMBZ5225 thru MMBZ5267
Zener Diodes
VZ Range 3.0 to 75V
Power Dissipation 300mW
9/5/00
Features
Silicon Planar Power Zener Diodes.
Standard Zener voltage tolerance is ±5%
tolerance with a “B” suffix. Other tolerances are avail-
able upon request.
High temperature soldering guaranteed:
250C/10 seconds at terminals.
These diodes are also available in MiniMELF case
with the type designation ZMM5225...ZMM5267, SOD-123
case with the type designation MMSZ5225... MMSZ5267.
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
Mounting Pad Layout
Top View
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K per box
E9/3K per 7” reel (8mm tape), 30K per box
相关PDF资料 |
PDF描述 |
|---|---|
| MMBZ5251B/E9 | 22 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
| MMBZ5255/E9 | 28 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
| MMBZ5256B/E9 | 30 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
| MMBZ5262B/E8 | 51 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
| MV1860E-2% | 2.2 pF, SILICON, VARIABLE CAPACITANCE DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ5248B | 功能描述:稳压二极管 18V 0.35W Zener RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMBZ5248B_D87Z | 功能描述:稳压二极管 18V 0.35W Zener RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMBZ5248B_Q | 功能描述:稳压二极管 18V 0.35W Zener RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMBZ5248B-7 | 功能描述:稳压二极管 18V 350mW RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMBZ5248B-7-F | 功能描述:稳压二极管 18V 350mW RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
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