参数资料
| 型号： | MMBZ5V6ALT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | TVS ZENER DUAL 24W CA 5.6V SOT23 |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 10,000 |
| 电压 - 反向隔离（标准值）： | 3V |
| 电压 - 击穿： | 5.32V |
| 功率（瓦特）： | 24W |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1)
@ T L ? 25 ? C
MMBZ5V6ALT1G thru MMBZ9V1ALT1G
MMBZ12VALT1G thru MMBZ33VALT1G
P pk
24
40
W
Total Power Dissipation on FR ? 5 Board (Note 2)
@ T A = 25 ? C
Derate above 25 ? C
Thermal Resistance Junction ? to ? Ambient
Total Power Dissipation on Alumina Substrate (Note 3)
@ T A = 25 ? C
Derate above 25 ? C
Thermal Resistance Junction ? to ? Ambient
Junction and Storage Temperature Range
Lead Solder Temperature ? Maximum (10 Second Duration)
? P D ?
R q JA
? P D ?
R q JA
T J , T stg
T L
225
1.8
556
300
2.4
417
? 55 to +150
260
mW ?
mW/ ? C
? C/W
? mW
mW/ ? C
? C/W
? C
? C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non ? repetitive current pulse per Figure 6 and derate above T A = 25 ? C per Figure 7.
2. FR ? 5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ORDERING INFORMATION
Device
MMBZ5V6ALT1G
SZMMBZ5V6ALT1G
MMBZ5V6ALT3G
MMBZ6VxALT1G
SZMMBZ6VxALT1G
MMBZ6VxALT3G
MMBZ9V1ALT1G
MMBZ9V1ALT13G
MMBZxxVALT1G
SZMMBZxxVALT1G
MMBZxxVALT3G
SZMMBZxxVALT3G
Package
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
Shipping ?
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
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| 0034.6719 | FUSE 2.5A 250V 8.5X8.5 T 18.8 |
| MMB23-0141G1 | CONN RACK/PANEL 14POS 5A |
| 0034.6717 | FUSE 1.6A 250V 8.5X8.5 T 18.8 |
| MMBZ33VALT3G | DIODE ZENER DUAL 40W 33V SOT-23 |
| 0034.6715 | FUSE 1A 250V 8.5X8.5 T 18.8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ5V6ALT3G | 功能描述:TVS二极管阵列 5.6V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ5V6B | 功能描述:TVS 二极管 - 瞬态电压抑制器 24W Pk Pwr Zener Trans volt Suppr RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| MMBZ5V6VAL-7 | 制造商:Diodes Incorporated 功能描述:24W AND 40W PEAK PWR DUAL SMD TVS 3SOT-23 - Tape and Reel |
| MMBZ6V2AL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 3V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 3V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 3V, SOT23; Reverse Stand-Off Voltage Vrwm:3V; Breakdown Voltage Min:5.89V; Breakdown Voltage Max:6.51V; Clamping Voltage Vc Max:8.7V; Peak Pulse Current Ippm:2.76A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes |
| MMBZ6V2AL,215 | 功能描述:ESD 抑制器 1Ch 8.7V 2.76A RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
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