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参数资料
| 型号： | MMBZ6V8AL-13 |
| 厂商： | DIODES INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 24 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 76K |
| 代理商： | MMBZ6V8AL-13 |
DS30306 Rev. 6 - 2
1 of 4
MMBZ5V6AL - MMBZ33VAL
www.diodes.com
Diodes Incorporated
MMBZ5V6AL - MMBZ33VAL
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
Dual TVS in Common Anode Configuration
24W/40W Peak Power Dissipation Rating
@ 1.0ms (Unidirectional)
225 mW Power Dissipation
Ideally Suited for Automatic Insertion
Low Leakage
Features
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
Pd
225
mW
Peak Power Dissipation (Note 2) MMBZ5V6AL - MMBZ10VAL
Ppk
24
W
Peak Power Dissipation (Note 2) MMBZ15VAL - MMBZ33VAL
Ppk
40
W
Thermal Resistance, Junction to Ambient Air (Note 1)
RqJA
556
°C/W
Operating and Storage Temperature Range
Tj,TSTG
–65 to +150
°C
Maximum Ratings @TA = 25°C unless otherwise specified
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Marking Code & Date Code,
See Page 2
Marking Code: See Table Below and Page 2
Weight: 0.008 grams (Approx.)
Ordering Information: See Page 2
ESD Rating Exceeding 16kV per the Human
Body Model (Note 4)
Mechanical Data
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
T
C
U
D
O
R
P
W
E
N
@TA = 25°C unless otherwise specified
Electrical Characteristics
Type
Number
Marking
Code
VRWM
IR @
VRWM
Breakdown Voltage
VC @IPP (Note 2)
Typical
Temperature
Coefficient
VBR (Note 3) (V)
@ IT
VC
IPP
Volts
mA
Min
Nom
Max
mA
V
A
Tc (mV/
°C)
MMBZ5V6AL
K9A
3
5.0
5.32
5.6
5.88
20
8.0
3.0
1.8
24 Watt (VF = 0.9V max @ IF = 10mA)
Note:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Non-repetitive current pulse per Figure 2 and derate above TA = 25
°C per Figure 1.
3. Short duration pulse test used to minimize self-heating effect.
4. MMBZ5V6AL and MMBZ15VAL exceed 16kV ESD rating, all other voltages exceed 8kV ESD rating.
Type
Number
Marking
Code
VRWM
IR @
VRWM
Breakdown Voltage
VC @IPP (Note 2)
Typical
Temperature
Coefficient
VBR (Note 3) (V)
@ IT
VC
IPP
Volts
mA
Min
Nom
Max
mA
V
A
Tc (%/
°C)
MMBZ6V8AL
K9C
4.5
0.5
6.46
6.8
7.14
1.0
9.6
2.5
+0.045
MMBZ9V1AL
K9D
6.0
0.3
8.65
9.1
9.56
1.0
14
1.7
+0.065
MMBZ10VAL
K9E
6.5
0.3
9.50
10
10.5
1.0
14.2
1.7
+0.065
24 Watt (VF = 1.1V max @ IF = 200mA)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ6V8AL-7 | 功能描述:TVS 二极管 - 瞬态电压抑制器 6.8V 225mW RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| MMBZ6V8AL-7-F | 功能描述:TVS二极管阵列 6.8V 225mW RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ6V8ALT1 | 功能描述:TVS二极管阵列 6.8V 225mW Dual RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ6V8ALT1G | 功能描述:TVS二极管阵列 6.8V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ6V8ALT1G | 制造商:ON Semiconductor 功能描述:TVS Diode 制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY, 40W, 6.8V, SOT-23 |
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