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参数资料
| 型号： | MMBZ6V8ALT1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| 中文描述： | 24 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236 |
| 封装： | LEAD FREE, PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 70K |
| 代理商： | MMBZ6V8ALT1G |
MMBZ5V6ALT1 Series
http://onsemi.com
5
TYPICAL CHARACTERISTICS
0.1
1
10
100
1000
1
10
100
Power is defined as V
RSM
x I
Z
(pk) where V
RSM
is
the clamping voltage at
I
Z
(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, T
A
= 25
°
C
BIDIRECTIONAL
MMBZ5V6ALT1
Figure 5. Pulse Waveform
V100
50
0
0
1
2
3
4
t, TIME (ms)
Figure 6. Pulse Derating Curve
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF I
PP
.
HALF VALUE
I
PP
2
t
P
t
r
≤
10 s
PEAK VALUE I
PP
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (
°
C)
Figure 7. Maximum Nonrepetitive Surge
Power, P
pk
versus PW
Figure 8. Maximum Nonrepetitive Surge
Power, P
pk
(NOM) versus PW
0.1
1
10
100
1000
1
10
100
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, T
A
= 25
°
C
BIDIRECTIONAL
MMBZ5V6ALT1
Power is defined as V
Z
(NOM) x I
Z
(pk) where
V
Z
(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
P
P
A
°
C
P
p
,
P
p
,
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ6V8ALT1G | 制造商:ON Semiconductor 功能描述:TVS Diode 制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY, 40W, 6.8V, SOT-23 |
| MMBZ6V8ALT3 | 功能描述:TVS二极管阵列 6.8V 225mW Dual RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ9V1AL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 6V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 6V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 6V, SOT23, Reverse Stand-Off Voltage Vrwm:6V, Breakdow 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 6V, SOT23, Reverse Stand-Off Voltage Vrwm:6V, Breakdown Voltage Min:8.65V, Breakdown Voltage Max:9.56V, Clamping Voltage Vc Max:14V, Peak Pulse Current Ippm:1.7A, Diode Case Style:SOT-23, No. of Pins:3 , RoHS Compliant: Yes |
| MMBZ9V1AL,215 | 功能描述:ESD 抑制器 1Ch 14V 1.7A RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| MMBZ9V1AL-13-F | 制造商:Diodes Incorporated 功能描述: |
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