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参数资料
| 型号： | MMDF3N06VLR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| 中文描述： | 3.3 A, 60 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MINIATURE, CASE 751-07, SO-8 |
| 文件页数： | 1/4页 |
| 文件大小： | 55K |
| 代理商： | MMDF3N06VLR2 |
Semiconductor Components Industries, LLC, 2004
April, 2004 Rev. 2
1
Publication Order Number:
MMDF3N06VL/D
MMDF3N06VL
Power MOSFET
3 Amps, 60 Volts
NChannel SO8, Dual
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls, these devices
are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
Features
Onresistance Area Product about Onehalf that of Standard
MOSFETs with New Low Voltage, Low R
DS(on)
Technology
Faster Switching than EFET Predecessors
Avalanche Energy Specified
I
DSS
and V
DS(on)
Specified at Elevated Temperature
Static Parameters are the Same for both TMOS V and TMOS EFET
Miniature SO8 Surface Mount Package Saves Board Space
Mounting Information for SO8 Package Provided
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
DraintoSource Voltage
DraintoGate Voltage, (R
GS
= 1 M
)
GatetoSource Voltage Continuous
Drain Current Continuous @ T
A
= 25
°
C
Drain Current
Continuous @ T
A
= 100
°
C
Drain Current
Single Pulse (t
p
≤
10 s)
Total Power Dissipation @ T
A
= 25
°
C
(Note 1)
Symbol
V
DSS
V
DGR
V
GS
I
D
I
D
I
DM
P
D
Value
60
60
±
15
3.3
0.7
10
2.0
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, Peak
I
L
= 3.3 Apk, L = 10 mH, R
G
= 25
)
Thermal Resistance, Junction to Ambient
(Note 1)
E
AS
54
mJ
R
θ
JA
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 0.0625
″
from case for 10
seconds
Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
T
L
260
°
C
1
Source1
1
2
3
4
8
7
6
5
Top View
Gate1
Source2
Gate2
Drain1
Drain1
Drain2
Drain2
Device
Package
Shipping
ORDERING INFORMATION
MMDF3N06VLR2
SO8
2500 Tape & Reel
SO8
CASE 751
STYLE 11
NChannel
MARKING
DIAGRAM
D
S
G
PIN ASSIGNMENT
http://onsemi.com
V
DSS
R
DS(ON)
TYP
I
D
MAX
60 V
130 m
3.0 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
8
3N06V
ALYW
1
8
A
L
Y
W
= Assembly Location
= Wafer Lot
= Year
= Work Week
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