- 您现在的位置：买卖IC网 > PDF目录382340 > MMDT3906V-7-L (DIODES INC) DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR PDF资料下载
参数资料
| 型号： | MMDT3906V-7-L |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-6 |
| 文件页数： | 1/4页 |
| 文件大小： | 80K |
| 代理商： | MMDT3906V-7-L |
Pb
Lead-free
DS30467 Rev. 6 - 2
1 of 4
MMDT3906V
www.diodes.com
Diodes Incorporated
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
M
L
B C
H
K
G
D
C
1
B
2
E
2
C
2
E
1
B
1
Mechanical Data
Case: SOT-563
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 20
Terminals: Lead bearing terminal plating available. See
Ordering information Page 4, Note 6
Marking & Type Code Information: See Last Page
Ordering Information: See Last Page
Weight: 0.003 grams (approximate)
MMDT3906V
DUAL PNP SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
Value
-40
-40
-5.0
-200
150
833
-55 to +150
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
C/W
C
SOT-563
Min
Dim
A
B
C
D
G
H
K
L
M
Max
Typ
0.15
0.30
0.25
1.10
1.25
1.20
1.55
1.70
1.60
0.50
0.90
1.10
1.00
1.50
1.70
1.60
0.56
0.60
0.60
0.10
0.30
0.20
0.10
0.18
0.11
All Dimensions in mm
SEE NOTE 2
C
1
B
2
E
2
C
2
E
1
B
1
N
Notes:
1. No purposefully added lead.
2. Package is non-polarized. Parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways).
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Thermal Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
P
d
R
JA
Value
150
833
Unit
mW
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
C/W
相关PDF资料 |
PDF描述 |
|---|---|
| MMFT2406T1 | Power MOSFET |
| MMFT2406T1G | Power MOSFET |
| MMFT2406T3 | Power MOSFET |
| MMFT2406T3G | Power MOSFET |
| MMG3002NT1 | Heterojunction Bipolar Transistor Technology (InGaP HBT) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT3906VC | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT3906VC-7 | 功能描述:两极晶体管 - BJT BIPOLAR TRANSISTOR DUAL PNP SOT-563 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT3906V-T | 功能描述:两极晶体管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT3906V-TP | 功能描述:两极晶体管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT3946 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Small signal surface mount transistor |
发布紧急采购，3分钟左右您将得到回复。