- 您现在的位置：买卖IC网 > PDF目录382340 > MMFT2406T1G (ON SEMICONDUCTOR) Power MOSFET PDF资料下载
参数资料
| 型号： | MMFT2406T1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 0.7 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 封装： | LEAD FREE, CASE 318E-04, TO-261, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 37K |
| 代理商： | MMFT2406T1G |
Publication Order Number:
MMFT2406T1/D
Semiconductor Components Industries, LLC, 2004
June, 2004 Rev. 3
1
MMFT2406T1
Power MOSFET
700 mA, 240 V, NChannel, SOT223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, converters,
solenoid and relay drivers. The device is housed in the SOT223
package which is designed for medium power surface mount
applications.
Silicon Gate for Fast Switching Speeds
High Voltage 240 Vdc
Low Drive Requirement
The SOT223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die.
PbFree Packages are Available
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DS
240
Vdc
GatetoSource Voltage Continuous
V
GS
±
20
Vdc
Drain Current
I
D
700
mAdc
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
65 to
150
°
C
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance JunctiontoAmbient
(surface mounted) (Note 1)
R
JA
83.3
°
C/W
Lead Temperature for Soldering Purposes,
1/16
″
from case
Time in Solder Bath
T
L
260
10
°
C
Sec
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Device mounted on a glass epoxy printed circuit board 1.575 in x 1.575 in
x 0.059 in; mounting pad for the collector lead min. 0.93 sq in.
D
G
S
700 mA, 240 V
R
DS(on)
= 6.0
1
2
3
4
NChannel
Device
Package
Shipping
ORDERING INFORMATION
MMFT2406T1
SOT223
1000 Tape & Reel
TO223
CASE 318E
STYLE 3
AWW
MARKING
DIAGRAM
T2406
A
WW
= Assembly Location
= Work Week
PIN ASSIGNMENT
3
Source
2
1
4
Gate
Drain
Drain
MMFT2406T3
SOT223
4000 Tape & Reel
http://onsemi.com
MMFT2406T1G
SOT223
(PbFree)
1000 Tape & Reel
MMFT2406T3G
SOT223
(PbFree)
2500 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
相关PDF资料 |
PDF描述 |
|---|---|
| MMFT2406T3 | Power MOSFET |
| MMFT2406T3G | Power MOSFET |
| MMG3002NT1 | Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| MMJT350T1 | Bipolar Power Transistors |
| MMO110 | AC Controller Modules |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT2406T3 | 制造商:Rochester Electronics LLC 功能描述: |
| MMFT2406T3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| MMFT2955E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS |
| MMFT2955ET1 | 制造商:ON Semiconductor 功能描述:MOSFET P SOT-223 |
| MMFT2N02EL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER LOGIC LEVEL TMOS FET 1.6 AMP 20 VOLTS |
发布紧急采购，3分钟左右您将得到回复。