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| 型号： | MMG3002NT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 衰减器 |
| 英文描述： | Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| 中文描述： | 40 MHz - 3600 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | PLASTIC, CASE 1514-01, SOT-89, 3 PIN |
| 文件页数： | 1/16页 |
| 文件大小： | 208K |
| 代理商： | MMG3002NT1 |
F
Freescale Semiconductor, Inc.
MMG3002NT1
Motorola, Inc. 2004
1
Go to: www.freescale.com
MMG3002NT1
40-3600 MHz, 20 dB
21 dBm
InGaP HBT
The RF MOSFET Line
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3002NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small-signal, high linearity, general purpose applications. It is suitable for
applications with frequencies from 40 to 3600 MHz such as Cellular, PCS,
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.
Features
Frequency: 40-3600 MHz
P1dB: 21 dBm
Power Gain: 20 dB
Third Order Output Intercept Point: 37.5 dBm
Single Voltage Supply
Internally Matched to 50 Ohms
Low Cost SOT-89 Surface Mount Package
Pb-Free Leads
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
123
CASE 1514-01, STYLE 1
SOT-89
PLASTIC
TYPICAL PERFORMANCE (1)
Characteristic
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Power Gain (S21)
G
p
20
18
14.5
dB
Input Return Loss
(S11)
IRL
-16
-26
-16
dB
Output Return Loss
(S22)
ORL
-12
-8
-11
dB
Power Output @
1dB Compression
P1db
21
21
18.5
dBm
Third Order Output
Intercept Point
(1) V
CC
=
5.2 Vdc, T
C
= 25
°
C, 50 ohm system
IP3
37.5
36
32
dBm
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage (2)
V
CC
7
V
Supply Current (2)
I
CC
400
mA
RF Input Power
P
in
12
dBm
Storage Temperature Range
T
stg
-65 to +150
°
C
Junction Temperature (3)
T
J
150
°
C
(2) Voltage and current applied to device.
(3) For reliable operation, the junction temperature should not exceed
150
°
C.
THERMAL CHARACTERISTICS
(V
CC
= 5.2 Vdc, I
CC
= 110 mA, T
C
= 25
°
C)
Characteristic
Symbol
Value (4)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
46.5
°
C/W
(4) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Order this document
by MMG3002NT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
For More Information On This Product,
Rev. 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMG3002NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| MMG3002NT1_12 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor |
| MMG3003NT1 | 功能描述:射频放大器 20DB 24DBM GEN PURP AMP RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MMG3003NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| MMG3003NT1_12 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor Technology |
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