参数资料
型号: MMG3002NT1
厂商: MOTOROLA INC
元件分类: 衰减器
英文描述: Heterojunction Bipolar Transistor Technology (InGaP HBT)
中文描述: 40 MHz - 3600 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: PLASTIC, CASE 1514-01, SOT-89, 3 PIN
文件页数: 4/16页
文件大小: 208K
代理商: MMG3002NT1
F
Freescale Semiconductor, Inc.
MMG3002NT1
4
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
50 OHM TYPICAL CHARACTERISTICS
10
25
0
T
C
= 85
°
C
f, FREQUENCY (GHz)
Figure 1. Unmatched Power Gain (S21) versus
Frequency
V
CC
= 5.2 Vdc
20
15
1
2
3
4
G
p
,
25
°
C
-40
°
C
4
40
0
0
S22
f, FREQUENCY (GHz)
Figure 2. Unmatched Input/Output
Return Loss versus Frequency
S11
10
20
30
1
2
3
S
22
9
23
10
P
out
, OUTPUT POWER (dBm)
Figure 3. Power Gain versus Output Power
V
CC
= 5.2 Vdc
I
CC
= 110 mA
21
19
17
15
13
12
14
16
G
p
,
900 MHz
11
18
3500 MHz, C5 = 0.1 pF
2140 MHz
3.5
3
2.5
2
1.5
1
0.5
17
24
23
22
20
18
V
CC
= 5.2 Vdc
I
CC
= 110 mA
f, FREQUENCY (GHz)
Figure 4. P1dB versus Frequency
P
21
19
5.4
0
160
4.6
V
CC
, COLLECTOR VOLTAGE (V)
Figure 5. Collector Current versus Collector
Voltage
80
60
20
4.7
5.1
5.2
I
C
,
40
4.8
4.9
5
5.3
4
27
42
0
f, FREQUENCY (GHz)
Figure 6. Third Order Output Intercept Point
versus Frequency
39
36
33
30
1
2
3
V
CC
= 5.2 Vdc
I
CC
= 110 mA
100 kHz Tone Spacing
I
20
140
120
100
V
CC
= 5.2 Vdc
I
CC
= 110 mA
2600 MHz
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