参数资料
型号: MMG3002NT1
厂商: MOTOROLA INC
元件分类: 衰减器
英文描述: Heterojunction Bipolar Transistor Technology (InGaP HBT)
中文描述: 40 MHz - 3600 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: PLASTIC, CASE 1514-01, SOT-89, 3 PIN
文件页数: 6/16页
文件大小: 208K
代理商: MMG3002NT1
F
Freescale Semiconductor, Inc.
MMG3002NT1
6
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
50 OHM APPLICATION CIRCUIT: 40-800 MHz
Figure 13. 50 Ohm Test Circuit Schematic
RF
OUTPUT
RF
INPUT
V
SUPPLY
C3
C4
Z1
Z2
C1
Z5
C2
R1
L1
V
CC
Z4
Z3
DUT
Figure 14. S21, S11 and S22 versus Frequency
40
30
0
f, FREQUENCY (MHz)
V
CC
= 5.2 Vdc
I
CC
= 110 mA
S22
200
400
600
800
20
10
0
10
20
30
Figure 15. 50 Ohm Test Circuit Component Layout
MMG30XX
Rev 1
C1
L1
C2
R1
C4
C3
Z1, Z5
Z2
Z3
0.347
x 0.058
Microstrip
0.575
x 0.058
Microstrip
0.172
x 0.058
Microstrip
Z4
PCB
0.403
x 0.058
Microstrip
Getek Grade ML200C, 0.031
,
ε
r
= 4.1
S
S21
S11
Table 1. 50 Ohm Test Circuit Component Designations and Values
Description
0.01
μ
F Chip Capacitors
0.1
μ
F Chip Capacitor
1
μ
F Chip Capacitor
470 nH Chip Inductor
7.5 Chip Resistor
Part
Part Number
0603A103JAT2A
0603A102JAT2A
0603A105JAT2A
BK2125HM471
RK73B2AT7R5J
Manufacturer
AVX
AVX
AVX
Taiyo Yuden
KOA Speer
C1, C2
C3
C4
L1
R1
Table 2. Supply Voltage versus R1 Values
Supply Voltage
6
7
8
9
10
11
12
V
R1 Value
7.3
16
25
35
44
53
62
NOTE: To provide V
CC
= 5.2 Vdc and I
CC
= 110 mA at the device.
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