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参数资料
| 型号： | MMDF3N06VLR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| 中文描述： | 3.3 A, 60 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MINIATURE, CASE 751-07, SO-8 |
| 文件页数： | 2/4页 |
| 文件大小： | 55K |
| 代理商： | MMDF3N06VLR2 |
MMDF3N06VL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 0.25 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
66
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
10
100
Adc
GateBody Leakage Current (V
GS
=
±
15 Vdc, V
DS
= 0 Vdc)
I
GSS
100
nAdc
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.5
3.0
2.0
Vdc
mV/
°
C
Static DraintoSource OnResistance
(V
GS
= 5.0 Vdc, I
D
= 3.3 Adc)
R
DS(on)
0.12
0.13
DraintoSource OnVoltage
(V
GS
= 5.0 Vdc, I
D
= 3.3 Adc)
(V
GS
= 5.0 Vdc, I
D
= 1.65 Adc, T
J
= 150
°
C)
V
DS(on)
0.5
0.4
Vdc
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 1.65 Adc)
g
FS
1.0
3.0
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
340
480
pF
Output Capacitance
C
oss
110
150
Transfer Capacitance
C
rss
27
50
SWITCHING CHARACTERISTICS
(Note 2)
TurnOn Delay Time
t
d(on)
10
20
ns
Rise Time
(V
DD
= 30
Vdc, I
D
= 3.3 Adc,
= 5 0 Vdc
V
GS
= 5.0 Vdc,
= 9.1
R
G
9.1
)
t
r
30
60
TurnOff Delay Time
t
d(off)
32
60
Fall Time
t
f
28
60
Gate Charge
Q
T
9.0
20
nC
= 48 Vdc, I
= 3.3 Adc,
(V
DS
48 Vdc, I
D
3.3 Adc,
V
GS
= 5.0 Vdc)
Q
1
1.5
Q
2
4.3
Q
3
3.5
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(I
S
= 3.3 Adc, V
GS
= 0 Vdc)
(I
S
= 3.3 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
0.84
0.67
1.2
Vdc
Reverse Recovery Time
t
rr
58
ns
(I = 3 3 Adc V
= 3.3 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/
μ
s)
t
a
38
t
b
20
Reverse Recovery Storage
Charge
Q
RR
0.11
C
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
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