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参数资料
| 型号： | MMDF1N05ER2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 50 V, 0.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/6页 |
| 文件大小： | 169K |
| 代理商： | MMDF1N05ER2 |
MMDF1N05E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 250 A)
V(BR)DSS
50
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0)
IDSS
—
250
Adc
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
VGS(th)
1.0
—
3.0
Vdc
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.6 Adc)
RDS(on)
—
0.30
0.50
Ohms
Forward Transconductance (VDS = 15 V, ID = 1.5 A)
gFS
—
1.5
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Ciss
—
330
—
pF
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Coss
—
160
—
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
—
50
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 10 V, ID = 1.5 A, RL = 10 ,
VG = 10 V, RG = 50 )
td(on)
—
20
ns
Rise Time
(VDD = 10 V, ID = 1.5 A, RL = 10 ,
VG = 10 V, RG = 50 )
tr
—
30
Turn–Off Delay Time
(VDD = 10 V, ID = 1.5 A, RL = 10 ,
VG = 10 V, RG = 50 )
td(off)
—
40
Fall Time
tf
—
25
Total Gate Charge
(VDS = 10 V, ID = 1.5 A,
VGS = 10 V)
Qg
—
12.5
—
nC
Gate–Source Charge
(VDS = 10 V, ID = 1.5 A,
VGS = 10 V)
Qgs
—
1.9
—
Gate–Drain Charge
VGS = 10 V)
Qgd
—
3.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage(1)
(IS = 1.5 A, VGS = 0 V)
(dIS/dt = 100 A/s)
VSD
—
1.6
V
Reverse Recovery Time
(IS = 1.5 A, VGS = 0 V)
(dIS/dt = 100 A/s)
trr
—
45
—
ns
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2.0%.
(2) Switching characteristics are independent of operating junction temperature.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF1N05ER2G | 功能描述:MOSFET NFET SO8D 50V 200mA 300mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF1N05ER2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2C01HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| MMDF2C02E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
| MMDF2C02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
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