参数资料
型号: MMDF1N05ER2
厂商: MOTOROLA INC
元件分类: JFETs
英文描述: 2 A, 50 V, 0.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: SO-8
文件页数: 3/6页
文件大小: 169K
代理商: MMDF1N05ER2
MMDF1N05E
3
Motorola TMOS Power MOSFET Transistor Device Data
0.1
0
7
0
2
4
6
10
8
6
4
2
I D
,DRAIN
CURRENT
(AMPS)
10
8
6
4
2
0
2
4
6
8
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
Figure 4. On–Resistance Variation with Temperature
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
R
DS(on)
,DRAIN–T
O–SOURCE
ON–RESIST
ANCE
(OHMS)
0
2
4
6
8
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
– 50
0
50
100
150
1.8
1.6
1.2
0.8
0.4
0
R
DS(on)
,DRAIN–T
O–SOURCE
ON–RESIST
ANCE
(NORMALIZED)
VGS = 10 V
0.2
0.3
0.4
0.5
100
°C
25
°C
– 55
°C
4 V
1
3
5
8
VGS = 10 V
ID = 1.5 A
TJ = 25°C
5 V
6 V
25
°C
0.2
0.6
1
1.4
– 25
25
75
125
8 V
4.5 V
10 V
– 55
°C
25
°C
100
°C
– 55
°C
VGS = 3.5 V
VDS ≥ 10 V
100
°C
Figure 5. On Resistance versus
Gate–To–Source Voltage
Figure 6. Gate Threshold Voltage Variation
with Temperature
150
125
100
75
50
25
0
– 25
– 50
1.2
1.1
1
0.9
0.8
0.7
V
GS(th)
,GA
TE
THRESHOLD
VOL
TAGE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
VDS = VGS
ID = 1 mA
0.5
0.4
0.3
0.2
0
2
3
TJ, JUNCTION TEMPERATURE
ID = 1.5 A
VGS = 0
0.1
4
5
6
7
8
9
10
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
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