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参数资料
| 型号： | MMDF2C02ER2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 3.6 A, 25 V, 0.1 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | MINIATURE, CASE 751-07, SO-8 |
| 文件页数： | 1/10页 |
| 文件大小： | 231K |
| 代理商： | MMDF2C02ER2 |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 8
1
Publication Order Number:
MMDF2C02E/D
MMDF2C02E
Power MOSFET
2.5 Amps, 25 Volts
Complementary SO8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a low reverse recovery time. MiniMOS
t
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dcdc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
25
Vdc
GatetoSource Voltage
VGS
± 20
Vdc
Drain Current Continuous NChannel
PChannel
Pulsed
NChannel
PChannel
ID
IDM
3.6
2.5
18
13
Adc
Operating and Storage Temperature Range
TJ and
Tstg
55
to 150
°C
PD
2.0
Watts
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 20 V, VGS = 10 V, Peak IL = 9.0 A,
L = 6.0 mH, RG = 25 Ω)NChannel
(VDD = 20 V, VGS = 10 V, Peak IL = 7.0 A,
L = 10 mH, RG = 25 Ω)PChannel
EAS
245
mJ
Thermal Resistance Junction to Ambient
(Note 2)
RθJA
62.5
°C/W
Maximum Lead Temperature for Soldering,
0.0625″ from case. Time in Solder Bath is
10 seconds.
TL
260
°C
1. Negative signs for PChannel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
NSource
1
2
3
4
8
7
6
5
Top View
NGate
PSource
PGate
NDrain
PDrain
Device
Package
Shipping
ORDERING INFORMATION
MMDF2C02ER2
SO8
2500 Tape & Reel
D
S
G
PChannel
D
S
G
NChannel
SO8
CASE 751
STYLE 14
MARKING
DIAGRAM
PIN ASSIGNMENT
2.5 AMPERES, 25 VOLTS
RDS(on) = 100 mW (NChannel)
RDS(on) = 250 mW (PChannel)
http://onsemi.com
1
8
F2C02
ALYW
1
8
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF2C02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
| MMDF2C03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF2C03HDR2G | 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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