参数资料
型号: MMDF2C03HDR2
厂商: MOTOROLA INC
元件分类: JFETs
英文描述: 2 A, 30 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: SO-8
文件页数: 9/12页
文件大小: 381K
代理商: MMDF2C03HDR2
MMDF2C03HD
6
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel
P–Channel
Figure 7. Capacitance Variation
C,
CAP
ACIT
ANCE
(pF)
10
0
10
15
25
TJ = 25°C
VDS = 0 V VGS = 0 V
1000
800
600
400
200
0
20
Ciss
Coss
Crss
5
Ciss
Crss
30
1200
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
C,
CAP
ACIT
ANCE
(pF)
400
600
800
1200
1000
10
0
10
15
20
30
VGS
VDS
5
Crss
TJ = 25°C
200
25
Ciss
VDS = 0 V VGS = 0 V
Ciss
Coss
Crss
0
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS
VDS
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
Qg, TOTAL GATE CHARGE (nC)
0
2
4
6
8
ID = 3 A
TJ = 25°C
VGS
6
3
0
12
9
24
18
12
6
0
VDS
QT
Q1
Q2
Q3
10
12
t,
TIME
(ns)
RG, GATE RESISTANCE (OHMS)
1000
1
100
10
1
VDD = 15 V
ID = 3 A
VGS = 10 V
TJ = 25°C
td(on)
tr
100
10
td(off)
tf
24
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
20
16
12
8
4
0
10
6
2
0
V
DS
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
12
8
4
2
4
6
8
16
ID = 2 A
TJ = 25°C
10
12
14
VDS
VGS
QT
Q2
Q3
Q1
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
1
t,
TIME
(ns)
VDD = 15 V
ID = 2 A
VGS = 10 V
TJ = 25°C
tr
tf
td(off)
td(on)
Qg, TOTAL GATE CHARGE (nC)
V
DS
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
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