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参数资料
| 型号： | MMDF4207R2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 4.8 A, 20 V, 0.033 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/12页 |
| 文件大小： | 196K |
| 代理商： | MMDF4207R2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Advance Information
Medium Power Surface Mount Products
TMOS Dual P-Channel
Field Effect Transistors
MiniMOS
devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications
Characterized Over a Wide Range of Power Ratings
Logic Level Gate Drive — Can Be Driven by
Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
IDSS Specified at Elevated Temperature
Miniature SO–8 Surface Mount Package —
Saves Board Space
DEVICE MARKING
ORDERING INFORMATION
D4207
Device
Reel Size
Tape Width
Quantity
D4207
MMDF4207R2
13
″
12 mm embossed tape
2500 units
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMDF4207/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1999
SOURCE 1
TOP VIEW
GATE 1
SOURCE 2
GATE 2
DRAIN 1
DRAIN 2
CASE 751–06, Style 11
SO–8
MMDF4207
DUAL TMOS
POWER MOSFET
6.2 AMPERES
20 VOLTS
RDS(on) = 33 mW
Motorola Preferred Device
1
2
3
4
8
7
6
5
D
S
G
相关PDF资料 |
PDF描述 |
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| MMDF4P03HDR2 | 4 A, 30 V, 0.085 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 |
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| MMDF7N02ZR2 | 7000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDFS2P102R2 | 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MMDFS2P102R2 | 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF4C03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
| MMDF4N01HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS |
| MMDF4N01HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: 制造商:MOTOROLA 功能描述: |
| MMDF4P03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
| MMDF-4SNB-1 | 制造商:Maxconn 功能描述: |
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