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参数资料
| 型号： | MMDF4207R2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 4.8 A, 20 V, 0.033 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 7/12页 |
| 文件大小： | 196K |
| 代理商： | MMDF4207R2 |
MMDF4207
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
10 V
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
4
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
02
0
6
10
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2
04
10
0
0.03
02
4
10
0.05
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.0
812
16
1
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 125°C
25
°C
–55
°C
TJ = 25°C
VGS = 0 V
TJ = 25°C
ID = 5 A
VGS = 2.5 V
ID = 5 A
3
68
4.5 V
– 50
– 25
0
25
50
75
100
125
150
TJ = 125°C
1.0
10
20
100
°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.2
0.4
1.2
0.6
1.0
1.4
1.6
2.0
2
6
2
8
0.02
0.03
0.04
0
0.5
0
0.1
0.04
0.01
8
25
°C
0.8
1.8
VGS = 10 V thru 1.5 V
TJ = 25°C
1.7 V
2.5 V
1
0
1000
4
0.5
2.5
1.5
0.05
8
1.6 V
1.5 V
4.5 V
2.1 V
1.8 V
1.9 V
4
0.01
6
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