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参数资料
| 型号： | MMDF4207R2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 4.8 A, 20 V, 0.033 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 5/12页 |
| 文件大小： | 196K |
| 代理商： | MMDF4207R2 |
MMDF4207
2
Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Characteristics
Symbol
Maximum
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MW)
Gate–to–Source Voltage — Continuous
VDSS
VDGR
VGS
20
12
±12
V
1 Inch Square @
10 seconds on
FR–4 or G–10 PCB
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (1)
RTHJA
PD
ID
IDM
62.5
2.0
16
7.8
5.7
40
°C/W
Watts
mW/
°C
A
1 Inch Square @
Steady State on
FR–4 or G–10 PCB
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (1)
RTHJA
PD
ID
IDM
98
1.28
10.2
6.2
4.6
35
°C/W
Watts
mW/
°C
A
Minimum Pad @
Steady State on
FR–4 or G–10 PCB
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (1)
RTHJA
PD
ID
IDM
166
0.75
6.0
4.8
3.5
30
°C/W
Watts
mW/
°C
A
Operating and Storage Temperature Range
TJ, Tstg
–55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 5.0 Apk, L = 40 mH, RG = 25 W)
EAS
500
mJ
(1) Repetitive rating; pulse width limited by maximum junction temperature.
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