参数资料
型号: MMDF5N02ZR2
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SO-8
文件页数: 1/12页
文件大小: 123K
代理商: MMDF5N02ZR2
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. XXX
1
Publication Order Number:
MMDF5N02Z/D
MMDF5N02Z
Power MOSFET
5 Amps, 20 Volts
NChannel SO8, Dual
EZFETs
t are an advanced series of Power MOSFETs which con-
tain monolithic backtoback zener diodes. These zener diodes pro-
vide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature low RDS(on) and true logic
level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the draintosource diode
has a very low reverse recovery time. EZFET devices are designed for
use in low voltage, high speed switching applications where power ef-
ficiency is important.
Zener Protected Gates Provide Electrostatic Discharge Protection
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
20
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
20
Vdc
GatetoSource Voltage Continuous
VGS
± 12
Vdc
Drain Current Continuous @ TA = 25°C
Drain Current Continuous @ TA = 70°C
Drain Current Single Pulse (tp ≤ 10 s)
ID
IDM
5.0
4.5
40
Adc
Apk
Total Power Dissipation @ TA = 25°C (Note 1.)
PD
2.0
Watts
Operating and Storage Temperature Range
TJ, Tstg
55
to 150
°C
Thermal Resistance Junction to Ambient
RθJA
62.5
°C/W
Maximum Temperature for Soldering
TL
260
°C
1. When mounted on 1 inch square FR4 or G10 board
(VGS = 4.5 V, @ 10 Seconds).
D
S
G
Source1
1
2
3
4
8
7
6
5
Top View
Gate1
Source2
Gate2
Drain1
Drain2
1
8
5 AMPERES
20 VOLTS
RDS(on) = 40 m
Device
Package
Shipping
ORDERING INFORMATION
MMDF5N02ZR2
SO8
2500 Tape & Reel
SO8, Dual
CASE 751
STYLE 11
http://onsemi.com
NChannel
LYWW
MARKING
DIAGRAM
5N02Z
= Device Code
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
相关PDF资料
PDF描述
MMDF7N02ZR2 7000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MMDFS2P102R2 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET
MMDFS2P102R2 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET
MMDFS3P303R2 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MMDFS6N303R2 6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
MMDF6N02HD 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS
MMDF6N02HDR2 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:
MMDF6N03HD 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS
MMDF6N03HDR2 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 6 Amps, 30 Volts
MMDF7N02Z 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS