参数资料
型号: MMDF5N02ZR2
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SO-8
文件页数: 11/12页
文件大小: 123K
代理商: MMDF5N02ZR2
MMDF5N02Z
http://onsemi.com
8
INFORMATION FOR USING THE SO8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to ensure proper solder connection inter-
face between the board and the package. With the correct
pad geometry, the packages will selfalign when subjected
to a solder reflow process.
mm
inches
0.060
1.52
0.275
7.0
0.024
0.6
0.050
1.270
0.155
4.0
SO8 POWER DISSIPATION
The power dissipation of the SO8 is a function of the in-
put pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined by TJ(max), the maximum rated junction temperature
of the die, RθJA, the thermal resistance from the device
junction to ambient; and the operating temperature, TA. Us-
ing the values provided on the data sheet for the SO8
package, PD can be calculated as follows:
PD =
TJ(max) TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 2.0 Watts.
PD =
150
°C 25°C
62.5
°C/W
= 2.0 Watts
The 62.5
°C/W for the SO8 package assumes the recom-
mended footprint on a glass epoxy printed circuit board to
achieve a power dissipation of 2.0 Watts using the footprint
shown. Another alternative would be to use a ceramic sub-
strate or an aluminum core board such as Thermal Clad
t.
Using board material such as Thermal Clad, the power dis-
sipation can be doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are sub-
jected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10
°C.
The soldering temperature and time shall not exceed
260
°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage to
the device.
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