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参数资料
| 型号： | MMDFS2P102R2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 751-07, SOP-8 |
| 文件页数： | 1/11页 |
| 文件大小： | 243K |
| 代理商： | MMDFS2P102R2 |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
MMDFS2P102/D
MMDFS2P102
Power MOSFET
2 Amps, 20 Volts
PChannel SO8, FETKYt
The FETKY product family incorporates low RDS(on), true logic
level MOSFETs packaged with industry leading, low forward drop,
low leakage Schottky Barrier rectifiers to offer high efficiency
components in a space saving configuration. Independent pinouts for
MOSFET and Schottky die allow the flexibility to use a single
component for switching and rectification functions in a wide variety
of applications such as Buck Converter, BuckBoost, Synchronous
Rectification, Low Voltage Motor Control, and Load Management in
Battery Packs, Chargers, Cell Phones and other Portable Products.
Power MOSFET with Low VF, Low IR Schottky Rectifier
Lower Component Placement and Inventory Costs along with
Board Space Savings
Logic Level Gate Drive Can be Driven by Logic ICs
Mounting Information for SO8 Package Provided
IDSS Specified at Elevated Temperature
Applications Information Provided
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
(Note 1.)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
20
Vdc
DraintoGate Voltage (RGS = 1.0 MW)
VDGR
20
Vdc
GatetoSource Voltage Continuous
VGS
"20
Vdc
Drain Current (Note 3.)
Continuous @ TA = 25°C
Continuous @ TA = 100°C
Single Pulse (tp v 10 ms)
ID
IDM
3.3
2.1
20
Adc
Apk
Total Power Dissipation @ TA = 25°C
(Note 2.)
PD
2.0
Watts
Single Pulse DraintoSource Avalanche
Energy STARTING TJ = 25°C
VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20
Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W
EAS
324
mJ
1. Negative sign for Pchannel device omitted for clarity.
2. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%.
3. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
10 sec. max.
Anode
1
2
3
4
8
7
6
5
Top View
Anode
Source
Gate
Cathode
Drain
Device
Package
Shipping
ORDERING INFORMATION
MMDFS2P102R2
SO8
2500 Tape & Reel
http://onsemi.com
D
S
G
PChannel
SO8
CASE 751
STYLE 18
LYWW
MARKING
DIAGRAM
2P102
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
1
8
2 AMPERES
20 VOLTS
RDS(on) = 160 mW
VF = 0.39 Volts
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