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参数资料
| 型号： | MMDFS2P102R2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 751-07, SOP-8 |
| 文件页数： | 8/11页 |
| 文件大小： | 243K |
| 代理商： | MMDFS2P102R2 |
MMDFS2P102
http://onsemi.com
6
TYPICAL FET ELECTRICAL CHARACTERISTICS
Figure 13. FET Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
t, TIME (s)
Rthja(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESPONSE
1.0
0.1
0.001
D = 0.5
SINGLE PULSE
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.0001
0.01
NORMALIZED TO RqJA AT STEADY STATE (1″ PAD)
CHIP
JUNCTION
0.0175
W
0.0154 F
0.0710
W
0.0854 F
0.2706
W
0.3074 F
0.5776
W
1.7891 F
0.7086
W
107.55 F
AMBIENT
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
TJ = 125°C
Figure 15. Typical Forward Voltage
Figure 16. Maximum Forward Voltage
0.7
1.0
0.1
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1.4
0
1.0
0.1
I F
,INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(AMPS)
0.1
0.4
0.2
0.3
0.5
0.6
0.8
0.9
0.2
0.4
0.6
0.8
10
I F
,INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(AMPS)
1.0
1.2
85
°C
25
°C
40
°C
TJ = 125°C
25
°C
85
°C
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