- 您现在的位置：买卖IC网 > PDF目录98025 > MMDFS2P102R2 (ON SEMICONDUCTOR) 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MMDFS2P102R2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 751-07, SOP-8 |
| 文件页数： | 4/11页 |
| 文件大小： | 243K |
| 代理商： | MMDFS2P102R2 |
MMDFS2P102
http://onsemi.com
2
SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRRM
VR
20
Volts
IO
1.0
Amps
Ifrm
2.0
Amps
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Ifsm
20
Amps
THERMAL CHARACTERISTICS SCHOTTKY AND MOSFET
Thermal Resistance JunctiontoAmbient (Note 2) MOSFET
RqJA
167
°C/W
Thermal Resistance JunctiontoAmbient (Note 3) MOSFET
RqJA
100
Thermal Resistance JunctiontoAmbient (Note 3.) MOSFET
RqJA
62.5
Thermal Resistance JunctiontoAmbient (Note 2) Schottky
RqJA
204
Thermal Resistance JunctiontoAmbient (Note 3) Schottky
RqJA
122
Thermal Resistance JunctiontoAmbient (Note 1) Schottky
RqJA
83
Operating and Storage Temperature Range
Tj, Tstg
55 to 150
1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.
2. Mounted with minimum recommended pad size, PC Board FR4.
3. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State.
相关PDF资料 |
PDF描述 |
|---|---|
| MMDFS2P102R2 | 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MMDFS3P303R2 | 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDFS6N303R2 | 6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MMDFS6N303 | 6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MMFT3055VT3G | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDFS3P303 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts |
| MMDFS3P303-D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts |
| MMDFS3P303R2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMDFS6N303R2 | 功能描述:MOSFET N-CH 30V 6A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:FETKY™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MMDJ3N03BJT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Power Transistors SO−8 for Surface Mount Applications |
发布紧急采购，3分钟左右您将得到回复。