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参数资料
| 型号： | MMDFS2P102R2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 751-07, SOP-8 |
| 文件页数： | 7/11页 |
| 文件大小： | 243K |
| 代理商： | MMDFS2P102R2 |
MMDFS2P102
http://onsemi.com
5
TYPICAL FET ELECTRICAL CHARACTERISTICS
Mounted on 2
″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one die operating, 10 s max.
Figure 7. Capacitance Variation
Figure 8. GateToSource and
DrainToSource Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
5.0
20
10
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
1200
800
1000
600
QG, TOTAL GATE CHARGE (nC)
16
0
6.0
4.0
2.0
0
100
1.0
RG, GATE RESISTANCE (OHMS)
1000
100
10
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
0.5
2.0
1.6
1.2
0.8
0.4
0
0.7
0.1
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
0.1
0.01
TJ, STARTING JUNCTION TEMPERATURE (°C)
50
150
25
350
300
50
0
1.0
C,
CAP
ACIT
ANCE
(pF)
V
400
200
0
5.0
0
10
4.0
8.0
12
10
0.9
1.1
1.3
1.5
,DRAIN
CURRENT
(AMPS)
I D
10
1.0
75
100
125
100
E
AS
,SINGLE
PULSE
DRAINT
OSOURCE
15
,GA
TETOSOURCE
VOL
TAGE
(VOL
TS)
GS
t,TIME
(ns)
I
,SOURCE
CURRENT
(AMPS)
S
100
10
100
10
8.0
150
200
250
A
V
ALANCHE
ENERGY
(mJ)
ID = 6.0 A
VDS = 0
VGS = 0
TJ = 25°C
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
ID = 2.0 A
TJ = 25°C
VDS
VGS
QT
Q2
Q1
Q3
td(off)
td(on)
tr
tf
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
10 ms
1.0 ms
100
ms
10
ms
VGS = 20 V
SINGLE PULSE
TC = 25°C
VGS
VDS
0
18
16
14
12
10
8.0
6.0
4.0
2.0
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